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Phys. Rev. B 74, 121404(R) (2006) [4 pages]

Subsurface structure of epitaxial rare-earth silicides imaged by STM

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C. Rogero*, J. A. Martín-Gago, and J. I. Cerdá
Instituto de Ciencia de Materiales de Madrid CSIC, 28049 Madrid, Spain

Received 1 March 2006; revised 27 June 2006; published 21 September 2006

We combine scanning tunneling microscopy (STM) images, density functional theory total energy calculations, and STM simulations to conclusively determine the surface structure of the Y3Si5(0001) silicide epitaxially grown on Si(111). We observe, for the same sample, two different types of atomic resolution images exhibiting either p3m or p6 symmetry, in analogy with previous works on similar rare-earth silicide surfaces. We elucidate the long-standing controversy regarding the interpretation of these images by showing that they are mainly related to the registry of the surfacemost Si bilayer with respect to the Si vacancy network located two layers below the surface and, therefore, to the existence of two different buried structural domains. Our results demonstrate an unsual STM depth sensitivity—up to 5 Å—for metallic systems.

© 2006 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.74.121404
DOI:
10.1103/PhysRevB.74.121404
PACS:
68.55.Ln, 68.37.Ef, 68.43.Bc

*Electronic address: rogerobc@inta.es