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Phys. Rev. B 73, 241316(R) (2006) [4 pages]

Mechanical control of spin-orbit splitting in GaAs and In0.04Ga0.96As epilayers

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V. Sih, H. Knotz, J. Stephens, V. R. Horowitz, A. C. Gossard, and D. D. Awschalom*
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA

Received 28 March 2006; revised 2 June 2006; published 27 June 2006

Time-resolved Kerr rotation spectroscopy as a function of pump-probe distance, voltage, and magnetic field is used to measure the momentum-dependent spin splitting energies in GaAs and InGaAs epilayers. The strain of the samples can be reproducibly controlled in the cryostat using three- and four-point bending applied with a mechanical vise. We find that the magnitude of the spin splitting increases linearly with applied tension and voltage. A strain-drift-diffusion model is used to determine the value of the spin-strain coupling coefficient for a strained GaAs epilayer.

© 2006 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.73.241316
DOI:
10.1103/PhysRevB.73.241316
PACS:
72.25.Dc, 72.25.Rb, 71.70.Ej, 71.70.Fk

*Electronic address: awsch@physics.ucsb.edu