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Phys. Rev. B 73, 195318 (2006) [7 pages]

Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices

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C. A. Marlow1, R. P. Taylor1,*, T. P. Martin1, B. C. Scannell1, H. Linke1, M. S. Fairbanks1, G. D. R. Hall1, I. Shorubalko2, L. Samuelson3, T. M. Fromhold4, C. V. Brown5, B. Hackens6, S. Faniel6, C. Gustin6, V. Bayot6, X. Wallart7, S. Bollaert7, and A. Cappy7
1Materials Science Institute, Physics Department, University of Oregon, Eugene, Oregon 97403-1274, USA
2Institute of Solid State Physics, University of Latvia, Kengarga 8, LV-1063, Riga, Latvia
3Solid State Physics and The Nanometer Consortium, Lund University, Box 118, S-221 00 Lund, Sweden
4School of Physics and Astronomy, University of Nottingham, N11 8NS, United Kingdom
5School of Biomedical and Natural Sciences, Nottingham Trent University, NG7 2RD, United Kingdom
6CERMIN, PCPM, and DICE Labs, Université Catholique de Louvain, B-1348, Belgium
7IEMN, Cité Scientifique, Villeneuve d’Ascq, France

Received 20 September 2005; published 19 May 2006

We present an experimental comparison of magnetoconductance fluctuations measured in the ballistic, quasiballistic, and diffusive scattering regimes of semiconductor devices. In contradiction to expectations, we show that the spectral content of the magnetoconductance fluctuations exhibits an identical fractal behavior for these scattering regimes and that this behavior is remarkably insensitive to device boundary properties. We propose a unified model of fractal conductance fluctuations in the ballistic, quasiballistic, and diffusive transport regimes, in which the generic fractal behavior is generated by a subtle interplay between boundary and material-induced chaotic scattering events.

© 2006 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.73.195318
DOI:
10.1103/PhysRevB.73.195318
PACS:
75.47.Jn, 73.23.−b, 73.21.Hb, 73.21.La

*Corresponding author. Electronic address: rpt@uoregon.edu

 
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