corner
corner
APS » Journals » Phys. Rev. B » Volume 73 » Issue 18
< Previous Article | Next Article >

Phys. Rev. B 73, 184111 (2006) [6 pages]

Effect of pressure and chemical substitutions on the charge-density-wave in LaAgSb2

Download: PDF (122 kB) Buy this article Export: BibTeX or EndNote (RIS)

S. L. Bud’ko, T. A. Wiener, R. A. Ribeiro*, and P. C. Canfield
Ames Laboratory US DOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, USA

Y. Lee† and T. Vogt‡
Physics Department, Brookhaven National Laboratory, Upton, New York 11973-5000, USA

A. H. Lacerda
National High Magnetic Field Laboratory, Los Alamos Facility, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

Received 5 December 2005; revised 24 March 2006; published 10 May 2006

We present data on the crystal structure and evolution of the electrical resistivity in lightly doped La1−xRxAgSb2 (R=Gd, Y, Ce, and Nd) at ambient pressure and in LaAgSb2 under hydrostatic pressure. The upper charge density wave transition is suppressed by both doping and pressure with substitution-related disorder being the dominant mechanism for this suppression in the former case and the anisotropic pressure dependence of the unit cell dimensions (as seen in the c∕a ratio) prevailing in the latter case.

© 2006 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.73.184111
DOI:
10.1103/PhysRevB.73.184111
PACS:
62.50.+p, 71.45.Lr

*Present address: Faculty of Integrated Arts and Sciences, Hiroshima University, 1-7-1 Kagamiyama, Higashi-Hiroshima, Hiroshima, 739-8521 Japan.

†Present address: Department of Earth System Sciences, Yonsei University, Seoul, 120749 Korea.

‡Present address: Nanocenter and Department of Chemistry and Biochemistry, University of South Carolina, Columbia, SC 29208.

 
< Previous Article | Next Article >