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Phys. Rev. B 72, 075446 (2005) [5 pages]

Metal-induced gap states in epitaxial organic-insulator/metal interfaces

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Manabu Kiguchi1,*, Ryotaro Arita2,†, Genki Yoshikawa3, Yoshiaki Tanida4, Susumu Ikeda1, Shiro Entani1, Ikuyo Nakai3, Hiroshi Kondoh3, Toshiaki Ohta3, Koichiro Saiki1,3, and Hideo Aoki2
1Department of Complexity Science and Engineering, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
2Department of Physics, University of Tokyo, Hongo, Tokyo 113-0033, Japan
3Department of Chemistry, University of Tokyo, Hongo, Tokyo 113-0033, Japan
4Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan

Received 11 January 2005; revised 2 June 2005; published 31 August 2005

We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic insulator/metal interfaces. The experiment is done for alkane/Cu(001) with an element-selective near edge x-ray absorption fine structure (NEXAFS), which exhibits a prepeak indicative of MIGS. An ab initio electronic structure calculation supports the existence of the MIGS. When the Cu substrate is replaced with Ni, an interface magnetism may be possible with a carrier doping.

© 2005 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.72.075446
DOI:
10.1103/PhysRevB.72.075446
PACS:
73.20.−r, 71.15.Mb, 73.40.Ns

*Present address: Department of Chemistry, Hokkaido University, Sapporo 060-0810, Japan.

†Present address: Max-Planck-Institut für Festköoperforschung, Stuttgart, Germany.

 
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