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Phys. Rev. B 72, 073103 (2005) [4 pages]

Influence of Ni doping on the electronic structure of Ni2MnGa

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Aparna Chakrabarti1, C. Biswas2, S. Banik2, R. S. Dhaka2, A. K. Shukla2, and S. R. Barman2,*
1Solid State Laser Division, Centre for Advanced Technology, Indore, 452013, Madhya Pradesh, India
2UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore, 452017, Madhya Pradesh, India

Received 12 May 2005; published 5 August 2005

The modifications in the electronic structure of Ni2+xMn1−xGa by Ni doping have been studied using the full potential linearized augmented plane wave method and ultraviolet photoemission spectroscopy. Ni 3d-related electron states appear due to formation of Ni clusters. We show the possibility of changing the minority-spin density of states (DOS) with Ni doping, while the majority-spin DOS remains almost unchanged. The total magnetic moment decreases with excess Ni. The total energy calculations corroborate the experimentally reported changes in the Curie temperature and the martensitic transition temperature with x.

© 2005 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.72.073103
DOI:
10.1103/PhysRevB.72.073103
PACS:
79.60.−i, 71.20.Lp

*Corresponding author. Electronic address: srbarman@mailcity.com, barman@csr.ernet.in