Phys. Rev. B 72, 035214 (2005) [11 pages]Vacancy-impurity complexes and limitations for implantation doping of diamondSee Also: Erratum Received 23 March 2005; revised 23 May 2005; published 18 July 2005 Many candidates have been proposed as shallow donors in diamond, but the small lattice constant means that many substitutional impurities generate large strains and thus yield low solubilities. Strained impurities favor complex formation with other defects and, in particular, the lattice vacancy. We report the results of first-principles calculations regarding the geometry, electronic structure, and energetics of impurity-vacancy complexes in diamond and show that such complexes explain the generally low doping efficiency for implanted material. © 2005 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.72.035214
DOI:
10.1103/PhysRevB.72.035214
PACS:
61.72.Ji, 61.72.Bb, 71.20.Mq, 71.23.An
See AlsoErratum: J. P. Goss, P. R. Briddon, M. J. Rayson, S. J. Sque, and R. Jones, Erratum: Vacancy-impurity complexes and limitations for implantation doping of diamond [Phys. Rev. B 72, 035214 (2005)], Phys. Rev. B 73, 199904 (2006). |
|
About | Terms and Conditions | Subscriptions | Search | Help
Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.