Phys. Rev. B 72, 033203 (2005) [4 pages]Piezo-magnetoelectric effects in p-doped semiconductorsReceived 4 April 2005; published 14 July 2005 We predict the appearance of a uniform magnetization in strained three-dimensional p-doped semiconductors with inversion symmetry breaking subject to an external electric field. We compute the magnetization response to the electric field as a function of the direction and magnitude of the applied strain. This effect could be used to manipulate the collective magnetic moment of hole mediated ferromagnetism of magnetically doped semiconductors. © 2005 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.72.033203
DOI:
10.1103/PhysRevB.72.033203
PACS:
72.20.My, 72.25.Dc, 75.50.Pp, 77.84.−s
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