Phys. Rev. B 72, 241310(R) (2005) [4 pages]Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems
We study the corrections in the low temperature limit to both the longitudinal conductivity and Hall resistivity due to electron-electron interactions in high-quality GaAs systems. Using the recent theory of Zala et al. Phys. Rev. B 64 214204 (2001)] we find that the interaction corrections to the conductivity and Hall resistivity are consistent with each other in n-GaAs, although the agreement is not as good in p-GaAs. This suggests that interaction effects can explain the metallic drop in resistivity at B=0 in n-GaAs systems, but more work is required to understand p-GaAs systems. © 2005 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.72.241310
DOI:
10.1103/PhysRevB.72.241310
PACS:
73.43.−f, 71.27.+a, 71.30.+h, 73.61.−r
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