Phys. Rev. B 72, 195406 (2005) [5 pages]Silicon overlayer growth on clean and hydrogen-terminated two-dimensional holmium silicideReceived 1 July 2005; revised 19 September 2005; published 7 November 2005 The growth of silicon overlayers on both two-dimensional (2D) holmium silicide and hydrogen-terminated 2D holmium silicide grown on Si(111) has been investigated using scanning tunneling microscopy (STM). In the nonhydrogen-terminated case, the surface is heavily islanded, exhibiting the 7×7 and 2×1 silicon reconstructions. Growth on the hydrogen-terminated surface differs substantially, being better ordered and less heavily islanded. Growth mechanisms are proposed to explain these observed differences. STM data are also presented from the hydrogen-terminated 2D holmium silicide surface. © 2005 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.72.195406
DOI:
10.1103/PhysRevB.72.195406
PACS:
68.55.Ac
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