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Phys. Rev. B 72, 155441 (2005) [9 pages]

Electronic structure and vibrational properties of Ba8Si46,Ba8AgnSi46−n, and Ba8AunSi46−n

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J. S. Tse
Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, Canada S7N 5E2

T. Iitaka
Computational Astrophysics Lab, RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan

T. Kume and H. Shimizu
Department of Materials Science, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan

K. Parlinski
Institute of Nuclear Physics, Polish Academy of Sciences, ul.Radzikowskiego 152, 31-342 Cracow, Poland

H. Fukuoka and S. Yamanaka
Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Higashi-Hiroshima, 739-8527, Japan

Received 13 June 2005; revised 10 August 2005; published 28 October 2005

The electronic and vibrational structures of Ba8Si46 and Ba8MnSi46−n, where some of the framework Si were replaced by metal (M=Ag or Au) have been studied. Theoretical calculations show that the nature of chemical bonding of the substituted clathrates and their vibrational properties are fundamentally different from Ba8Si46. Low-frequency vibrations associated with the motions of Ba in the large cages and the framework metals have been identified from their Raman spectra. A surprisingly large contribution of the low-frequency modes, particularly those which arise from the Ba vibrations in the large cages, to the electron-phonon coupling parameter in Ba8Si46 was found.

© 2005 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.72.155441
DOI:
10.1103/PhysRevB.72.155441
PACS:
78.30.−j, 63.20.Dj, 63.20.Pw, 71.20.−b