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Phys. Rev. B 72, 012415 (2005) [4 pages]

Low-temperature behavior of the ESR linewidth in a system with a spin gap: η-Na1.286V2O5

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F. Chabre1, A. M. Ghorayeb1, P. Millet2, V. A. Pashchenko3, and A. Stepanov1
1Laboratoire Matériaux et Microélectronique de Provence, CNRS UMR 6137, Case 142, Faculté des Sciences de St-Jérôme, Université d’Aix-Marseille III, 13397 Marseille Cedex 20, France
2Centre d’Elaboration de Matériaux et d’Etudes Structurales, CNRS UPR 8011, B.P. 4347, 29 rue Jeanne Marvig, 31055 Toulouse Cedex, France
3Physikalisches Institut, Johann Wolfgang Goéthe Universität, Robert-Mayer-Strasse 2-4, 60054 Frankfurt am Main, Germany

Received 9 August 2004; revised 13 April 2005; published 21 July 2005

Using X-band electron spin resonance (ESR) spectroscopy down to 4.2 K, we report on the low-temperature magnetic behavior of η-Na1.286V2O5, a system with a spin gap. We particularly find that the ESR linewidth of this compound shows an unusual temperature dependence, rich in features. Addressing the problem via the memory function formalism, we propose an explanation for this, whereby we suggest that this unconventional low-temperature behavior is related to the way in which the magnetic susceptibility and the memory function depend on temperature, rather than to a specific magnetic origin.

© 2005 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.72.012415
DOI:
10.1103/PhysRevB.72.012415
PACS:
76.30.−v, 75.50.Ee, 76.50.+g