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Phys. Rev. B 71, 052504 (2005) [3 pages]

T linearity of in-plane resistivity in Bi2Sr2CaCu2O8+δ thin films

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Seongshik Oh1,2, Tiziana Di Luccio1,3, and J. N. Eckstein1
1Department of Physics, University of Illinois, Urbana, Illinois 61801, USA
2National Institute of Standards and Technology, Boulder, Colorado 80305, USA
3Dipartimento di Fisica and INFM, Università di Salerno, Via S. Allende, Baronissi, 84081 Italy

Received 25 September 2004; revised 6 December 2004; published 22 February 2005

We performed a temperature and doping-dependent study of in-plane dc resistivity (IDCR) on molecular beam epitaxy grown Bi2Sr2CaCu2O8+δ thin films. By analyzing the temperature dependence of normal state IDCR as a function of doping level, we show that long-known T-linear dependence of normal state IDCR occurs not at the optimal doping (p=0.16∕Cu) but at an overdoping of p=0.19∕Cu, which coincides with the recently proposed putative quantum critical point. This observation suggests that p=0.19 may be a sample-independent critical doping level at least for bilayer cuprate systems.

© 2005 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.71.052504
DOI:
10.1103/PhysRevB.71.052504
PACS:
74.62.Dh, 74.25.Fy, 74.78.Bz, 74.72.Hs