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Phys. Rev. B 71, 045310 (2005) [7 pages]

Synchrotron x-ray studies of vitreous SiO2 over Si(001). I. Anisotropic glass contribution

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M. Castro-Colin1, W. Donner1, S. C. Moss1,2, Z. Islam3, S. K. Sinha4, R. Nemanich5, H. T. Metzger6, P. Bösecke6, and T. Shülli6
1Physics Department, University of Houston, Houston, Texas 77204-5005, USA
2Texas Center for Superconductivity and Advanced Materials, University of Houston, Houston, Texas 77204, USA
3Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
4Department of Physics, University of California San Diego, California 92093-0354, USA
5Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, USA
6European Synchrotron Radiation Facility, BP 220, 38043 Grenoble CEDEX 9, France

Received 9 July 2004; published 13 January 2005

While numerous investigations of the structure and interface of amorphous SiO2 thermally grown on Si, theoretical as well as experimental, have been carried out over the years, a definitive picture of this thin gate oxide and its interface remains lacking. We have explored this issue using synchrotron x rays in grazing incidence geometry. In this geometry a fourfold modulation in the first sharp diffraction peak (FSDP) from thin vitreous SiO2 of 100 and 500 Å thickness can be observed. While the FSDP exhibits a modulation throughout the entire film, this modulation decays away from the interface. Reflectivity measurements were also performed, which reveal an interfacial layer of 3% density increase in the SiO2 film over the bulk (film) density.

© 2005 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.71.045310
DOI:
10.1103/PhysRevB.71.045310
PACS:
68.47.Gh, 61.10.Eq, 61.43.Fs, 78.70.Ck
 
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