Electronic continuum states and far-infrared absorption of InAs∕GaAs quantum dots

The electronic continuum states of InAs∕GaAs semiconductor quantum dots embedded in a GaAs∕AlAs superlattice are theoretically investigated and the far-infrared midinfrared absorption spectra are calculated for a variety of structures and polarizations. The effect of a strong magnetic field applied parallel to the growth direction is also investigated. We predict that the flatness of the InAs∕GaAs dots leads to a midinfrared absorption which is almost insensitive to the magnetic field, in spite of the reorganization of the continuum into series of quasi-Landau states. We also predict that it is possible to design InAs∕GaAs photoconductors which display very strong in-plane absorption.