corner
corner

Phys. Rev. B 71, 214502 (2005) [7 pages]

Effect of disorder in MgB2 thin films

Download: PDF (269 kB) Buy this article Export: BibTeX or EndNote (RIS)

M. Iavarone, R. Di Capua*, A. E. Koshelev, and W. K. Kwok
Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

F. Chiarella and R. Vaglio
INFM-Coherentia Dipartimento di Scienze Fisiche, Facoltà di Ingegneria, Università di Napoli “Federico II,” P. le Tecchio 80, 80125 Napoli, Italy

W. N. Kang, E. M. Choi, H. J. Kim, and S. I. Lee
NCRICS and Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea

A. V. Pogrebnyakov, J. M. Redwing, and X. X. Xi
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802

Received 30 July 2004; revised 24 January 2005; published 2 June 2005

We report on scanning tunneling spectroscopy studies of magnesium diboride (MgB2) thin films grown by different techniques. The films have critical temperatures ranging between 28 and 41 K with very different upper critical fields. We find that the superconducting gap associated with the σ band decreases almost linearly with decreasing critical temperature while the gap associated with the π band is only very weakly affected in the range of critical temperatures above 30 K. In the sample with the lowest critical temperature (28 K) we observe a small increase of the π gap that can only be explained in terms of an increase in the interband scattering. The tunneling data was analyzed in the framework of the two-band model. The magnetic-field-dependent tunneling spectra and the upper critical field measurements of these disordered samples can be consistently explained in terms of an increase of disorder that mostly affects the π band in samples with reduced critical temperatures.

© 2005 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.71.214502
DOI:
10.1103/PhysRevB.71.214502
PACS:
74.70.Ad, 74.50.+r, 74.25.Jb, 68.37.Ef

*Present address: INFM-Coherentia Dipartimento di Scienze Fisiche, Facolta di Ingegneria, Universita’ di Napoli “Federico II,” P. le Tecchio 80, 80125 Napoli, Italy