Phys. Rev. B 71, 155208 (2005) [5 pages]Resonant Raman scattering spectroscopy of GaP1−xNx and GaAs1−xNx in the ultraviolet rangeReceived 21 October 2003; revised 11 August 2004; published 27 April 2005 We report resonant Raman scattering studies of GaP1−xNx and GaAs1−xNx in the ultraviolet (UV) spectral range. For both materials, strong intensity resonances and their rapid degradation near the respective E1 transition energies exhibited for the zone-center longitudinal optical phonons provide direct evidence that the L-point conduction-band edges of GaP1−xNx and GaAs1−xNx are strongly perturbed by nitrogen impurities. We also show that UV resonant Raman scattering is a powerful means to study higher lying conduction-band electronic states of semiconductor alloys. © 2005 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.71.155208
DOI:
10.1103/PhysRevB.71.155208
PACS:
78.30.Fs, 63.20.−e, 71.55.Eq
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