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Phys. Rev. B 71, 155206 (2005) [7 pages]

Anisotropic exchange interactions in III-V diluted magnetic semiconductors

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C. Timm1,* and A. H. MacDonald2,†
1Institut für Theoretische Physik, Freie Universität Berlin, Arnimallee 14, D-14195 Berlin, Germany
2Physics Department, University of Texas at Austin, Austin, Texas 78712-0264, USA

Received 5 January 2005; published 25 April 2005

The RKKY interaction between substitutional Mn local moments in GaAs is both spin-direction dependent and spatially anisotropic. In this paper we address the strength of these anisotropies using a semiphenomenological tight-binding model that treats the hybridization between Mn d-orbitals and As p-orbitals perturbatively and accounts realistically for its nonlocality. We show that valence-band spin-orbit coupling, exchange nonlocality, and band-structure anisotropy all play a role in determining the strength of these effects. We use the results to estimate the degree of ground-state magnetization suppression due to frustrating interactions between randomly located Mn ions and to comment on the relationships between different models of III-V diluted magnetic semiconductor ferromagnetism.

© 2005 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.71.155206
DOI:
10.1103/PhysRevB.71.155206
PACS:
75.50.Pp, 75.30.Et, 75.30.Gw, 75.20.Hr

*Electronic address: timm@physik.fu-berlin.de

Electronic address: macd@physics.utexas.edu