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Phys. Rev. B 71, 115309 (2005) [9 pages]

Exciton-LO phonon dynamics in InAs∕GaAs quantum dots: Effects of zone-edge phonon damping

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Paweł Machnikowski
Institute of Physics, Wrocław University of Technology, 50-370 Wrocław, Poland and Institute für Festkörpertheorie, Universität Münster, 48149 Münster, Germany

Lucjan Jacak
Institute of Physics, Wrocław University of Technology, 50-370 Wrocław, Poland

Received 10 December 2003; revised 19 November 2004; published 15 March 2005

The dynamics of an exciton-LO phonon system after an ultrafast optical excitation in an InAs∕GaAs quantum dot is studied theoretically. Influence of anharmonic phonon damping and its interplay with the phonon dispersion is analyzed. The signatures of the zone-edge decay process in the absorption spectrum and time evolution are highlighted, providing a possible way of experimental investigation on phonon anharmonicity effects.

© 2005 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.71.115309
DOI:
10.1103/PhysRevB.71.115309
PACS:
78.67.Hc, 63.20.Kr