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Phys. Rev. B 71, 014118 (2005) [7 pages]

Defect structure of the high-dielectric-constant perovskite CaCu3Ti4O12

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L. Wu, Y. Zhu*, S. Park, S. Shapiro, and G. Shirane
Brookhaven National Laboratory, Upton, New York 11973, USA

J. Tafto
University Oslo, Blindern, 0316 Oslo, Norway

Received 17 August 2004; published 31 January 2005

Using transmission electron microscopy (TEM) we studied CaCu3Ti4O12, an intriguing material that exhibits a huge dielectric response, up to kilohertz frequencies, over a wide range of temperature. Neither in single crystals, nor in polycrystalline samples, including sintered bulk and thin films, did we observe the twin domains suggested in the literature. Nevertheless, in the single crystals, we saw a very high density of dislocations with a Burger vector of [110], as well as regions with cation disorder and planar defects with a displacement vector 1/4[110]. In the polycrystalline samples, we observed many grain boundaries with oxygen deficiency, in comparison with the grain interior. The defect-related structural disorders and inhomogeneity, serving as an internal barrier layer capacitance in a semiconducting matrix, might explain the very large dielectric response of the material. Our TEM study of the structure defects in CaCu3Ti4O12 supports a recently proposed morphological model with percolating conducting regions and blocking regions.

© 2005 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.71.014118
DOI:
10.1103/PhysRevB.71.014118
PACS:
61.14.Lj, 61.72.Nn, 61.72.Ff, 61.72.Mm

*Email address: zhu@bnl.gov