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Phys. Rev. B 70, 064426 (2004) [8 pages]

Structural and magnetoelectric properties of Ga2−xFexO3 single crystals grown by a floating-zone method

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T. Arima1,2,*, D. Higashiyama3, Y. Kaneko1, J. P. He1, T. Goto3, S. Miyasaka3, T. Kimura3,†, K. Oikawa4, T. Kamiyama4, R. Kumai5, and Y. Tokura1,3,5
1Spin Superstructure Project, ERATO, Japan Science and Technology Agency, AIST Tsukuba Central 4, Tsukuba 305-8562, Japan
2Institute of Materials Science, University of Tsukuba, Tsukuba 305-8573, Japan
3Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
4Neutron Science Laboratory, Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba 305-0801, Japan
5Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST),Tsukuba 305-8562, Japan

Received 8 December 2003; revised 5 April 2004; published 31 August 2004

Lattice-structural, magnetic, and magnetoelectric (ME) properties have been investigated for single crystals of prototypical polar ferrimagnet Ga2−xFexO3 (0.8⩽x⩽1.4) as melt-grown by a floating-zone (FZ) method. Magnetization measurements show that the saturated magnetization as well as the ferrimagnetic phase transition temperature (TC) increases with as increase of Fe content x, while the coercive force decreases. A neutron powder diffraction study indicates fairly low ordering of Ga and Fe arrangement at cation sites, which is likely related to the lower TC in the FZ crystals than in the corresponding flux-grown crystals. Coefficients of linear and quadratic ME effects have been obtained with measurements of change in electric polarization induced by sweeping a magnetic field. Electric polarization was largely modulated in a magnetic field applied parallel to the direction of spontaneous magnetization, but not in a field parallel to that of the spontaneous polarization. A simple model to explain the sharp contrast is presented.

© 2004 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.70.064426
DOI:
10.1103/PhysRevB.70.064426
PACS:
75.50.Gg, 75.80.+q, 61.12.Ld, 75.25.+z

*Corresponding author; present address: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan; electronic address: arima@tagen.tohoku.ac.jp

Present address: Los Alamos National Laboratory, Los Alamos, NM 87545.