Phys. Rev. B 70, 045322 (2004) [8 pages]Calculations and applications of the complex band structure for carbon nanotube field-effect transistorsReceived 17 December 2003; revised 11 March 2004; published 30 July 2004 Using a tight binding transfer matrix method, we calculated the complex band structure for armchair and zigzag carbon nanotubes (CNTs). The imaginary part of the complex band structure connecting the conduction and valence band forms a loop, which can profoundly affect the characteristics of nanoscale electronic devices made with CNTs. We then study the quantum transport in carbon nanotube field-effect transistors (CNTFETs) with the complex band structure effects. A complete picture of the complex band structure effect on the performance of semiconductor zigzag CNTFETs is drawn. © 2004 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.70.045322
DOI:
10.1103/PhysRevB.70.045322
PACS:
81.07.De, 85.35.Kt, 85.30.Tv, 85.30.De
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