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Phys. Rev. B 70, 241306(R) (2004) [4 pages]

Insulating behavior of dilute two-dimensional holes in GaAs under an in-plane magnetic field

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Hwayong Noh1,2, Jongsoo Yoon3, Daniel C. Tsui1, and Mansour Shayegan1
1Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
2Department of Physics and Institute of Fundamental Physics, Sejong University, Seoul 143-747, Korea
3Department of Physics, University of Virginia, Charlottesville, Virginia 22903, USA

Received 3 November 2004; published 15 December 2004

Insulating resistivity of high mobility dilute two-dimensional holes in GaAs under an in-plane magnetic field exhibits a weak temperature dependence when the carrier density is higher than the critical density of zero-field metal-insulator transition. When the density is below the critical density, the temperature dependence is stronger and exhibits a crossover from the Mott variable range hopping to the Efros-Shklovskii variable range hopping as the field is increased.

© 2004 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.70.241306
DOI:
10.1103/PhysRevB.70.241306
PACS:
73.40.−c, 73.20.Qt, 73.43.Qt
 
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