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Phys. Rev. B 70, 235321 (2004) [7 pages]

Structural models and core-level shifts of the oxidation of the Si(001) surface

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J. T. Arantes, R. H. Miwa, and T. M. Schmidt
Faculdade de Física, Universidade Federal de Uberlândia, CP 593, CEP 38400–902, Uberlândia, MG, Brazil

Received 10 February 2004; revised 13 August 2004; published 17 December 2004

A first-principles investigation of the oxygen adsorption processes on the Si(001) surface is presented. Our optimized full core potential calculations give nine energetically stable structural models for the suboxide Si1+, Si2+, and Si3+ components. Our computed initial state Si 2p core-level shifts for the most stable configuration, of each Sin+ species, gives −0.96, −1.89, and −2.28 eV for n=1, 2, and 3, respectively. These results are in good agreement with high-resolution photoemission spectra, which allow us to determine the structural model of each Sin+ species. Also we verified a connection between the adsorption energies of the structural models and the measured intensity ratios of each suboxide component. The calculated adsorption energies of the most stable structural model for each species, in decreasing order, are Si2+, Si1+, and Si3+, in agreement with experimental intensities for low O2 dose results.

© 2004 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.70.235321
DOI:
10.1103/PhysRevB.70.235321
PACS:
81.65.Mq, 79.60.Bm, 73.20.Hb