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Phys. Rev. B 70, 201403(R) (2004) [4 pages]

Elastic anomaly for SrTiO3 thin films grown on Si(001)

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F. S. Aguirre-Tostado1, A. Herrera-Gómez1, J. C. Woicik2, R. Droopad3, Z. Yu3, D. G. Schlom4, P. Zschack5, E. Karapetrova5, P. Pianetta6, and C. S. Hellberg7
1CINVESTAV-Queretaro, Libramiento Norponiente 2000, Real de Juriquilla Queretaro 76230, Mexico
2Ceramics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
3Microelectronics and Physical Sciences Labs, Motorola Labs, 2100E Elliot Road, Tempe, Arizona 85284, USA
4Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA
5University of Illinois, APS-UNICAT, Argonne National Lab, Argonne, Illinois 60439, USA
6Stanford Synchrotron Radiation Laboratory, Stanford, California 94309, USA
7Center for Computational Materials Science, Naval Research Laboratory, Washington, D.C. 20375, USA

Received 3 March 2004; published 5 November 2004

X-ray diffraction measurements have revealed a negative Poisson’s ratio for SrTiO3 thin films grown on Si(001). X-ray absorption fine-structure measurements demonstrate that this elastic anomaly is driven by the interfacial polarization of the SrTiO3 layers. First-principles density-functional calculations support these conclusions. It is suggested that this phenomenon may be common for heteroepitaxial growth of materials that possess an ionic polarizability.

© 2004 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.70.201403
DOI:
10.1103/PhysRevB.70.201403
PACS:
68.35.Gy, 68.37.Yz, 68.60.Bs
 
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