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Phys. Rev. B 70, 125401 (2004) [7 pages]

Dislocation arrangements in pentacene thin films

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B. Nickel1,2,*, R. Barabash3,†, R. Ruiz4,‡, N. Koch2,5, A. Kahn5, L. C. Feldman4, R. F. Haglund4, and G. Scoles1,2
1Chemistry Department, Princeton University, Princeton, New Jersey 08544, USA
2Princeton Materials Institute, Princeton, New Jersey 08544, USA
3Oak Ridge National Laboratory, Metals and Ceramics Division, Oak Ridge, Tennessee 37831-6188, USA
4Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee, 37235, USA
5Department of Electrical Enginering, Princeton University, Princeton, New Jersey 08544, USA

Received 21 January 2004; published 2 September 2004

We have studied the growth of pentacene films (2–8 monolayers) on modified Si-wafer surfaces by means of synchrotron x-ray diffraction. The diffraction data reveal a nonthermal damping of the (coherent) Bragg reflection intensities according to an exponential dependence on the 3∕2 power of the momentum transfer. The simultaneous presence of strong diffuse scattering centered around the Bragg positions indicates the presence of local defects. A quantitative analysis of the Bragg and diffuse scattering allows us to identify screw and edge dislocations as the main defects on the molecular scale. We quantify dislocation densities as a function of substrate termination.

© 2004 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.70.125401
DOI:
10.1103/PhysRevB.70.125401
PACS:
68.35.Rh, 68.55.Nq

*Present address: Ludwig-Maximilians-Universität München, Germany. Electronic address: bert.nickel@physik.uni-muenchen.de

†Electronic address: barabashr@ornl.gov

‡Present address: Cornell University, Cornell Center for Materials Research, Ithaca, NY 14853.

 
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