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Phys. Rev. B 70, 104519 (2004) [13 pages]

Analysis of the surface termination of Nd1+xBa2−xCu3Oy thin films

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X. Torrelles1, C. Aruta2, A. Fragneto5, I. Maggio-Aprile3, L. Ortega4, F. Ricci5,*, J. Rius1, M. Salluzzo5,†, and U. Scotti di Uccio5,6
1Institut de Ciencia de Materials de Barcelona (C.S.I.C.) Campus de la U.A.B., 081893 Bellaterra, Barcelona, Spain
2INFM-COHERENTIA, Università di Roma “Tor Vergata,” Dipartimento di Ingegneria Meccanica, Via del Politecnico 1, 00133 Roma, Italy
3Département de Physique de la Matière Condensée, Université de Genève, CH-1211 Genève, Switzerland
4CNRS, Laboratoire de Cristallographie, BP 166, 38042 Grenoble, France
5INFM-COHERENTIA and Dipartimento di Scienze Fisiche, Università di Napoli “Federico II” Piazzale Tecchio 80, I-80125 Napoli, Italy
6Di.M.S.A.T., Università di Cassino, Cassino, Italy

Received 8 September 2003; revised 17 May 2004; published 28 September 2004

High quality, very flat Nd1+xBa2−xCu3Oy films have been grown by sputtering and analyzed by low energy electron diffraction, scanning tunneling microscopy (STM) and grazing incidence x-ray diffraction (GIXD) employing synchrotron radiation, in order to investigate the surface structure and morphology. The refinement of the GIXD data has been performed on the basis of structural models sensitive to the nature of the terminating layer. The interpretation of the results provides a picture of the surface structure that is in full agreement with STM results. The surface is composed by two terraces with different termination, one of which is an ordered and complete Cu(1)-O layer and the other an incomplete BaO layer that partially covers a disordered Cu(1)-O layer. Atomic vacancies and steps bounding terraces with a height of about 0.4 nm, are present on the surface.

© 2004 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.70.104519
DOI:
10.1103/PhysRevB.70.104519
PACS:
68.35.Bs, 74.78.Bz, 68.55.−a, 74.78.Fk

*Present address: Pirelli Labs, viale Sarca 222, 20126 Milano.

Corresponding author. Electronic address: Salluzzo@na.infn.it