Phys. Rev. B 69, 035338 (2004) [5 pages]Conductance distribution in nanometer-sized semiconductor devices due to dopant statisticsReceived 13 August 2003; revised 5 November 2003; published 30 January 2004 We show that individual dopant atoms dominate the transport characteristics of nanometer-sized devices, by investigating metal-semiconductor diodes down to 15 nm diameter. Room-temperature measurements reveal a strongly increasing scatter in the device-to-device conductance towards smaller device sizes. The low-temperature measurements exhibit pronounced features, caused by resonant tunneling through electronic states of individual dopant atoms. We demonstrate by a statistical analysis that this behavior can be explained by the presence of randomly distributed individual dopant atoms in the space-charge region. © 2004 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.69.035338
DOI:
10.1103/PhysRevB.69.035338
PACS:
85.35.-p, 73.30.+y, 61.72.-y, 71.55.-i
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