Phys. Rev. B 69, 193202 (2004) [4 pages]Optical and electrical properties of vanadium and erbium in 4H-SiCReceived 30 January 2004; published 12 May 2004 Local-density-functional calculations are carried out on vanadium and erbium centers in 4H-SiC. Particular attention is paid to their electrical and optical properties. We find that both V and Er lie at Si sites and can exist in three charge states with deep donor and acceptor levels. While isolated VSi possesses intra-d and ionization induced optical transitions around 0.94 and 2.9 eV respectively, the intense and temperature stable intra-f optical transitions due to Er are unlikely to be due to an isolated Er defect. It is suggested that both impurities can trap H and N forming complexes which may limit the electrical efficiency of V and act as Er related exciton traps. © 2004 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.69.193202
DOI:
10.1103/PhysRevB.69.193202
PACS:
61.72.Bb, 61.72.Ji, 71.15.Mb, 71.55.-i
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