Phys. Rev. B 69, 155404 (2004) [7 pages]Structure of thin SiO2 films grown on Mo(112)Received 11 November 2003; published 5 April 2004 Ultra-thin SiO2 films were prepared by evaporating Si onto a Mo(112) surface followed by oxidation and annealing up to 1200 K. The surface structure and film quality were investigated by low-energy electron diffraction (LEED), Auger spectroscopy (AES), and high-resolution electron energy loss spectroscopy (HREELS). A well-ordered, monolayer Mo(112)-c(2×2)-SiO2 structure was characterized by HREELS and shown to exhibit unique phonon features compared to bulk SiO2. The phonon features are assigned to Si-O-Mo rather than Si-O-Si species, and the surface structure determined to be Mo(112)-c(2×2)-[SiO4] where each of the four oxygen atoms bonds to the substrate Mo atoms. © 2004 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.69.155404
DOI:
10.1103/PhysRevB.69.155404
PACS:
68.49.-h
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