Phys. Rev. B 69, 153310 (2004) [4 pages]Structure of Er-O complexes in crystalline SiReceived 25 September 2003; revised 8 January 2004; published 30 April 2004 The local structure around Er3+ ions in Er+O doped silicon has been investigated by extended x-ray absorption spectroscopy. By comparing samples obtained by molecular-beam epitaxy and ion implantation a common structure comes out. Er is linked to five or six O atoms at around 2.24 Å and there is a well defined Er-O-Si bond angle of 135° and an Er-Si separation of 3.6 Å. The Er-Si distance is appreciably longer than that found in the more stable structures from ab-initio calculations and a discussion on the possible site for Er is presented. © 2004 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.69.153310
DOI:
10.1103/PhysRevB.69.153310
PACS:
61.72.Tt, 61.10.Ht, 78.55.Ap
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