Phys. Rev. B 68, 073310 (2003) [4 pages]Exciton-phonon interactions and exciton dephasing in semiconductor quantum-well heterostructuresReceived 9 June 2003; published 29 August 2003 We have investigated exciton-phonon coupling and related exciton dephasing processes in monolayer semiconductor heterostructures with localized quasi two-dimensional (2D) excitonic states. The calculated lateral size dependence of low-temperature Huang-Rhys factors indicates the enhancement of exciton-phonon coupling with decreasing the lateral size of the quasi-2D exciton localization area. This entails the increase of exciton dephasing. At low temperatures, the exciton absorption line exhibits an essentially non-Lorentzian asymmetric shape with the asymmetry increasing with the decrease of temperature and the lateral size of the quasi-2D exciton localization area. © 2003 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.68.073310
DOI:
10.1103/PhysRevB.68.073310
PACS:
78.67.-n, 68.65.-k, 71.35.-y, 72.10.Di
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