corner
corner

Phys. Rev. B 68, 060506(R) (2003) [4 pages]

Raman study of carrier-overdoping effects on the gap in high-Tc superconducting cuprates

Download: PDF (78 kB) Buy this article Export: BibTeX or EndNote (RIS)

T. Masui*, M. Limonov, H. Uchiyama, S. Lee, and S. Tajima
Superconductivity Research Laboratory, ISTEC, 1-10-13 Shinonome, Tokyo, 135-0062, Japan

A. Yamanaka
Chitose Institute of Science and Technology, Chitose, Hokkaido 066-8655, Japan

Received 26 February 2003; published 25 August 2003

Raman scattering in the heavily overdoped (Y,Ca)Ba2Cu3O7-δ (Tc=65K) and Bi2Sr2CaCu2O8+δ (Tc=55K) crystals has been investigated. For both the crystals, the electronic pair-breaking peaks in the A1g and B1g polarizations were largely shifted to the low energies close to a half of 2Δ0, Δ0 being the maximum gap. It strongly suggests s-wave mixing into the d-wave superconducting order parameter and the consequent manifestation of the Coulomb screening effect in the B1g channel. Gradual mixing of s-wave component with overdoping is not due to the change of crystal structure symmetry but a generic feature in all high-Tc superconducting cuprates.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.68.060506
DOI:
10.1103/PhysRevB.68.060506
PACS:
74.25.Gz, 74.72.Bk, 74.72.Hs

*Electronic address: masui@istec.or.jp

Permanent address: A. F. Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia.