Phys. Rev. B 68, 041201(R) (2003) [4 pages]Mechanism of electron localization at edge-sharing units in amorphous SiO2
We have presented a model of the electron-trapping process at edge-sharing SiO4 units that are supposed to exist as structural defects especially at the surface of silica-based materials. It has been shown that the edge-sharing SiO4 dimer can trap an electron, giving rise to a paramagnetic threefold-coordinated silicon and a negatively charged nonbridging oxygen. The former Si-related paramagnetic center exhibits a characteristic of the so-called E′ center. The electrical level of the related electron trapping center is ∼2eV below the conduction band. © 2003 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.68.041201
DOI:
10.1103/PhysRevB.68.041201
PACS:
61.72.Ji, 61.43.Fs, 61.80.Ba, 68.35.Dv
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