corner
corner
APS » Journals » Phys. Rev. B » Volume 68 » Issue 24
< Previous Article | Next Article >

Phys. Rev. B 68, 245204 (2003) [17 pages]

Charge dynamics of muonium centers in Si revealed by photoinduced muon spin relaxation

Download: PDF (241 kB) Buy this article Export: BibTeX or EndNote (RIS)

R. Kadono*
Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan

R. M. Macrae† and K. Nagamine‡
The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-0198, Japan

Received 23 May 2003; published 29 December 2003

Muonium dynamics in crystalline Si has been studied in both p-type and n-type samples using the muon spin-relaxation technique combined with photoexcitation. Controlling the excess carrier density in this way has revealed the dynamics of charge-exchange cycles and transfer processes involving MuBC0/+ and MuT-/0. In particular, photoexcitation has provided access to processes involving hole capture not attained by conventional experimental techniques. As a consequence, strong evidence was found for the delayed formation of electrically inactive muonium states in both types of Si, suggesting a process of diffusion-limited direct interaction of muonium with dopant impurities (i.e., muonium passivation).

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.68.245204
DOI:
10.1103/PhysRevB.68.245204
PACS:
71.55.Cn, 76.75.+i

*Also at School of Mathematical and Physical Science, The Graduate University for Advanced Studies.

†Present address: Natural and Behavioral Sciences Department, Marian College, Indianapolis, IN 46222-1997.

‡Present address: Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801, Japan.

 
< Previous Article | Next Article >