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Phys. Rev. B 68, 233310 (2003) [4 pages]

Ab initio description of the diluted magnetic semiconductor Ga1-xMnxAs: Ferromagnetism, electronic structure, and optical response

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L. Craco, M. S. Laad, and E. Müller-Hartmann
Institut für Theoretische Physik, Universität zu Köln, Zülpicher Strasse, D-50937 Köln, Germany

Received 6 October 2003; published 31 December 2003

Motivated by a study of various experiments describing the electronic and magnetic properties of the diluted magnetic semiconductor Ga1-xMnxAs, we investigate its physical response in detail using a combination of first-principles band structure with methods based on dynamical mean field theory to incorporate strong, dynamical correlations, and intrinsic as well as extrinsic disorder in one single theoretical picture. We show how ferromagnetism is driven by double exchange (DE), in agreement with very recent observations, along with a good quantitative description of the details of the electronic structure, as probed by scanning tunneling microscopy and optical conductivity. Our results show how ferromagnetism can be driven by DE even in diluted magnetic semiconductors with small carrier concentration.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.68.233310
DOI:
10.1103/PhysRevB.68.233310
PACS:
75.50.Pp, 71.55.Eq, 78.20.-e