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Phys. Rev. B 68, 201308(R) (2003) [4 pages]

Layer-charge instability in unbalanced bilayer systems in the quantum Hall regime

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E. Tutuc, R. Pillarisetty, S. Melinte, E. P. De Poortere, and M. Shayegan
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

Received 4 September 2003; published 25 November 2003

Measurements in GaAs hole bilayers with unequal layer densities reveal a pronounced magneto-resistance hysteresis at the magnetic-field positions where either the majority or minority layer is at Landau level filling factor one. At a fixed field in the hysteretic regions, the resistance exhibits an unusual time dependence, consisting of random, bidirectional jumps followed by slow relaxations. These anomalies are likely caused by instabilities in the charge distribution of the two layers.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.68.201308
DOI:
10.1103/PhysRevB.68.201308
PACS:
73.50.-h, 71.70.Ej, 73.43.Qt
 
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