Phys. Rev. B 68, 020102(R) (2003) [4 pages]

In situ x-ray diffraction study of silicon at pressures up to 15.5 GPa and temperatures up to 1073 K

Abstract

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G. A. Voronin¹, C. Pantea^1,2, T. W. Zerda¹, L. Wang³, and Y. Zhao²
¹Department of Physics and Astronomy, Texas Christian University, Fort Worth, Texas 76129, USA
²LANSCE-12, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
³Mineral Physics Institute, State University of New York at Stony Brook, Stony Brook, New York 11794-2100, USA

Received 10 April 2003; published 28 July 2003

In situ x-ray diffraction measurements of silicon were conducted in the pressure range 6–15.5 GPa and at temperatures up to 1073 K. The results were used to improve the phase diagram for silicon. The pressure range where the Si_II phase is stable in the temperature interval 293–973 K was found. The positions of the Si_I-Si_II, Si_II-Si_XI, Si_XI-Si_V equilibrium lines and the Si_I-Si_II-Si_L, Si_II-Si_XI-Si_L, Si_XI-Si_V-Si_L triple points were determined.

URL:

http://link.aps.org/doi/10.1103/PhysRevB.68.020102

DOI:

10.1103/PhysRevB.68.020102

PACS:

64.70.Kb, 61.50.Ks, 64.70.Dv, 81.30.Hd

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Phys. Rev. B 68, 020102(R) (2003) [4 pages]

In situ x-ray diffraction study of silicon at pressures up to 15.5 GPa and temperatures up to 1073 K