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Phys. Rev. B 68, 165208 (2003) [5 pages]

Realistic models of binary glasses from models of tetrahedral amorphous semiconductors

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De Nyago Tafen and D. A. Drabold
Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701, USA

Received 3 July 2003; published 29 October 2003

We present an approach for modeling binary glasses beginning with models of tetrahedral amorphous semiconductors and report models of glassy GeSe2,SiSe2,SiO2, and GeSe4. The topology of our models are analyzed through partial pair correlations and static structure factors. Structural properties, including the first sharp diffraction peak, electronic and vibrational properties are all in agreement with experiment. Our approach is simpler and faster than traditional melt-quench simulations and emphasizes the importance of correct topology of starting structure for successful modeling.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.68.165208
DOI:
10.1103/PhysRevB.68.165208
PACS:
61.43.Bn, 61.43.Fs