corner
corner

Phys. Rev. B 68, 165205 (2003) [19 pages]

Electronic states and cyclotron resonance in n-type InMnAs

Download: PDF (382 kB) Buy this article Export: BibTeX or EndNote (RIS)

G. D. Sanders, Y. Sun, F. V. Kyrychenko, and C. J. Stanton
Department of Physics, University of Florida, Box 118440, Gainesville, Florida 32611-8440, USA

G. A. Khodaparast, M. A. Zudov*, and J. Kono
Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA

Y. H. Matsuda and N. Miura
Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

H. Munekata
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503, Japan

Received 18 April 2003; published 23 October 2003

We present a theory for electronic and magneto-optical properties of n-type In1-xMnxAs magnetic alloy semiconductors in a high magnetic field Bẑ. We use an eight-band Pidgeon-Brown model generalized to include the wave vector (kz) dependence of the electronic states as well as s-d and p-d exchange interactions with localized Mn d electrons. Calculated conduction-band Landau levels exhibit effective masses and g factors that are strongly dependent on temperature, magnetic field, Mn concentration (x), and kz. Cyclotron resonance (CR) spectra are computed using Fermi’s golden rule and compared with ultrahigh-magnetic-field (>50 T) CR experiments, which show that the electron CR peak position is sensitive to x. Detailed comparison between theory and experiment allowed us to extract the s-d and p-d exchange parameters α and β. We find that not only α but also β affects the electron mass because of the strong interband coupling in this narrow-gap semiconductor. In addition, we derive analytical expressions for effective masses and g factors within the eight-band model. Results indicates that (α-β) is the crucial parameter that determines the exchange interaction correction to the cyclotron masses. These findings should be useful for designing novel devices based on ferromagnetic semiconductors.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.68.165205
DOI:
10.1103/PhysRevB.68.165205
PACS:
75.50.Pp, 78.20.Ls, 78.40.Fy

*Present address: Physics Department, University of Utah, Salt Lake City, Utah 84112, USA.

Present address: Department of Physics, Faculty of Science, Okayama University, Okayama, Japan.