Phys. Rev. B 67, 035315 (2003) [5 pages]Piezoelectric effect in elongated (In,Ga)As islands on GaAs(100)Received 22 August 2002; revised 19 November 2002; published 17 January 2003 The piezoelectric (PZ) effect is demonstrated for the elongated three-dimensional (In,Ga)As islands grown on a GaAs (100) substrate. The photoluminescence (PL) spectrum is studied as a function of excitation intensity. With increasing excitation intensity, a blue shift and a linewidth reduction of the PL peak from the (In,Ga)As islands are observed. The observed phenomena are attributed to the screening of the internal strain-induced PZ field in the (In,Ga)As islands. © 2003 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.67.035315
DOI:
10.1103/PhysRevB.67.035315
PACS:
78.55.Cr, 78.67.Lt, 77.65.Ly
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