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Phys. Rev. B 67, 035301 (2003) [12 pages]

Full-frequency voltage noise spectral density of a single-electron transistor

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Andreas Käck and Göran Wendin
Microtechnology Center at Chalmers MC2, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96, Göteborg, Sweden

Göran Johansson
Institut für Theoretische Festkörperphysik, Universität Karlsruhe, D-761 28 Karlsruhe, Germany

Received 6 October 2002; published 6 January 2003

We calculate the full-frequency spectral density of voltage fluctuations in a single-electron transistor (SET), used as an electrometer biased above the Coulomb threshold so that the current through the SET is carried by sequential tunneling events. We consider both a normal-state SET and a superconducting SET. The whole spectrum, from low-frequency telegraph noise to quantum noise at frequencies comparable to the SET charging energy (EC/ħ) to high-frequency Nyquist noise, is described. We take the energy exchange between the SET and the measured system into account using a real-time diagrammatic Keldysh technique. The voltage fluctuations determine the backaction of the SET on the measured system, and we specifically discuss the case of superconducting charge qubit read-out and measuring the so-called Coulomb staircase of a single Cooper-pair box.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.67.035301
DOI:
10.1103/PhysRevB.67.035301
PACS:
73.23.Hk, 03.67.Lx, 42.50.Lc, 85.25.Na