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Phys. Rev. B 67, 245309 (2003) [11 pages]

Low temperature annealing in tetrahedral amorphous carbon thin films observed by 13C NMR spectroscopy

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Todd M. Alam1, T. A. Friedmann2, Peter A. Schultz3, and Daniel Sebastiani4
1Department of Organic Materials, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
2Department of Nanostructure and Semiconductor Physics, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
3Department of Computational Materials and Molecular Biology, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
4Max-Planck Institut für Polymerforschung, Ackermannweg 10, D-55128 Mainz, Germany

Received 10 October 2002; revised 23 January 2003; published 12 June 2003

For the first time to our knowledge, the 13C solid-state magic angle spinning (MAS) NMR spectrum of a 99% 13C enriched tetrahedral amorphous-carbon (ta-C) thin film containing a high concentration of fourfold coordinated carbon species (82%) is reported along with measured NMR spectra for the ta-C film after low temperature annealing (650 °C). Differential changes are observed for the 13C MAS NMR chemical shifts and linewidths of both the fourfold (diamondlike) and threefold (graphitelike) coordinated carbon species within the thin films with increasing annealing time; however, there was no change (±2%) in the relative fourfold content. These spectral changes are associated with the large compressive stress reduction (6–8 GPa) in the carbon film. Ab initio calculations of the 13C NMR chemical shift, along with shift variations as a function of atomic volume are reported for amorphous carbon and crystalline diamond. Using the observed spectral variations in the solid-state 13C MAS NMR, along with the ab initio chemical shift calculations, the effect of annealing on the ta-C films is discussed and related to current models of thermal stress relaxation in ta-C thin films.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.67.245309
DOI:
10.1103/PhysRevB.67.245309
PACS:
81.05.Uw, 81.40.Ef, 83.85.Fg, 82.56.-b