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APS » Journals » Phys. Rev. B » Volume 67 » Issue 24
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Phys. Rev. B 67, 241309(R) (2003) [4 pages]

Role of finite layer thickness in spin polarization of GaAs two-dimensional electrons in strong parallel magnetic fields

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E. Tutuc, S. Melinte, E. P. De Poortere, and M. Shayegan
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

R. Winkler
Institut für Technische Physik III, Universität Erlangen-Nürnberg, Staudtstr. 7, D-91058 Erlangen, Germany

Received 30 April 2003; published 26 June 2003

We report measurements and calculations of the spin polarization, induced by a parallel magnetic field, of interacting, dilute, two-dimensional electron systems confined to GaAs/AlGaAs heterostructures. The results reveal the crucial role the non-zero electron layer thickness plays: it causes a deformation of the energy surface in the presence of a parallel field, leading to enhanced values for the effective mass and g factor, and a nonlinear spin polarization with field.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.67.241309
DOI:
10.1103/PhysRevB.67.241309
PACS:
73.50.-h, 71.70.Ej, 73.43.Qt
 
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