Phys. Rev. B 67, 235311 (2003) [4 pages]Self-assembling of nanovoids in 800-keV Ge-implanted Si/SiGe multilayered structuresReceived 7 October 2002; revised 13 February 2003; published 11 June 2003 We report on the self-assembled formation of spherically shaped voids in a Si/SiGe layered structure after 800-keV Ge ion implantation followed by rapid thermal annealing. The voids are of nanometer size and are solely assembled in thin SiGe quantum wells in the surface region (<Rp/2) of the implanted sample. The results are discussed in terms of the separation of the vacancy and interstitial depth profiles attributed to the preferential forward momentum of recoiling Si atoms. The strain situation around the SiGe quantum wells is suggested as a possible reason for the void self-assembling effect. © 2003 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.67.235311
DOI:
10.1103/PhysRevB.67.235311
PACS:
61.72.Qq, 61.72.Ji, 61.72.Ff, 81.15.Hi
|
|
About | Terms and Conditions | Subscriptions | Search | Help
Use of the American Physical Society websites and journals implies that the user has read and agrees to our Terms and Conditions and any applicable Subscription Agreement. Physical Review®, Physical Review Letters®, Reviews of Modern Physics®, and Physical Review Special Topics® are trademarks of the American Physical Society.