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Phys. Rev. B 67, 224106 (2003) [11 pages]

Bonding in MgSi and Al-Mg-Si compounds relevant to Al-Mg-Si alloys

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Anders G. Frøseth* and Ragnvald Høier
Norwegian University of Science and Tecnology (NTNU), N-7034 Trondheim, Norway

Peter M. Derlet
Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland

Sigmund J. Andersen and Calin D. Marioara
SINTEF Materials Technology, Applied Physics, N-7050 Trondheim, Norway

Received 17 December 2002; published 19 June 2003

The bonding and stability of MgSi and Al-Mg-Si compounds relevant to Al-Mg-Si alloys is investigated with the use of (linearized) augmented plane-wave + (local-orbitals) density-functional theory calculations. We show that the β and β phases found in the precipitation sequence are characterized by the presence of covalent bonds between Si-Si nearest-neighbor pairs and covalent/ionic bonds between Mg-Si nearest-neighbor pairs. We then investigate the stability of two recently discovered precipitate phases, U1 and U2, both containing Al in addition to Mg and Si. We show that both phases are characterized by tightly bound Al-Si networks, made possible by a transfer of charge from the Mg atoms.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.67.224106
DOI:
10.1103/PhysRevB.67.224106
PACS:
71.20.Gj

*Email address: Anders.Froseth@phys.ntnu.no