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Phys. Rev. B 67, 205329 (2003) [4 pages]

Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots

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E. Péronne1,2,*, F. Fossard3, F. H. Julien3, J. Brault4, M. Gendry4, B. Salem5, G. Bremond5, and A. Alexandrou1
1Laboratoire d’Optique et Biosciences, UMR CNRS 7645, INSERM U451, Ecole Polytechnique–Ecole Nationale Supériore de Techniques Avancées, F-91128 Palaiseau, France
2Laboratoire d’Optique Appliquée, UMR CNRS 7639, Ecole Nationale Supériore de Techniques Avancées–Ecole Polytechnique, F-91761 Palaiseau, France
3Institut d’Electronique Fondamentale, UMR CNRS 8622, Université Paris-Sud, F-91405 Orsay, France
4Laboratoire d’Electronique, Optoélectronique et Microsystèmes, UMR CNRS 5512, Ecole Centrale de Lyon, F-69134 Ecully, France
5Laboratoire de Physique de la Matière, UMR CNRS 5511, Institut National des Sciences Appliquées de Lyon, F-69621 Villeurbanne, France

Received 10 February 2003; published 30 May 2003

We have observed a dynamic saturation of an intersublevel transition in InAs/InxAl1-xAs quantum dots related to the discrete nature of electron states using midinfrared femtosecond spectroscopy. This dynamic saturation is a consequence of the gradual filling of the discrete quantum-dot electron states due to the capture of electrons injected in the barrier. Our interpretation of the differential transmission experiments is confirmed by a comparison with a rate-equation model with the capture and intersublevel relaxation time as fit parameters yielding 10 ps and 1 ps, respectively. We discuss the mechanism responsible for these relaxation times.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.67.205329
DOI:
10.1103/PhysRevB.67.205329
PACS:
78.47.+p, 73.21.La

*Present address: Department of Chemistry, University of Aarhus, DK-8000 Aarhus C., Denmark.