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Phys. Rev. B 67, 193201 (2003) [4 pages]

Electron space charge effect on spin injection into semiconductors

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Yue Yu1, Jinbin Li1, and S. T. Chui2
1Institute of Theoretical Physics, Chinese Academy of Sciences, P.O. Box 2735, Beijing 100080, China
2Bartol Research Institute, University of Delaware, Newark, Delaware 19716

Received 10 January 2003; revised 17 March 2003; published 27 May 2003

We consider spin polarized transport in a ferromagnet-insulator/semiconductor/insulator-ferromagnet junction. We find that the spin current is strongly dependent on the spin configurations, the doping, and space charge distribution in the semiconductor. When the ferromagnet-semiconductor interface resistance is comparable to the semiconductor resistance, the magnetoresistance ratio of this junction can be greatly enhanced under appropriate doping when the space charge effect in the nonequilibrium transport processes is taken into consideration.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.67.193201
DOI:
10.1103/PhysRevB.67.193201
PACS:
73.40.-c, 71.70.Ej, 75.25.+z