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Phys. Rev. B 67, 155205 (2003) [4 pages]

Anisotropy and large magnetoresistance in the narrow-gap semiconductor FeSb2

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C. Petrovic*, J. W. Kim, S. L. Bud’ko, A. I. Goldman, and P. C. Canfield
Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011

W. Choe and G. J. Miller
Ames Laboratory and Department of Chemistry, Iowa State University, Ames, Iowa 50011

Received 11 June 2002; revised 20 December 2002; published 14 April 2003

A study of the anisotropy in magnetic, transport, and magnetotransport properties of FeSb2 has been made on large single crystals grown from Sb flux. Magnetic susceptibility of FeSb2 shows diamagnetic to paramagnetic crossover around 100 K. Electrical transport along two axes is semiconducting, whereas the third axis exhibits a metal-semiconductor crossover at temperature Tcr which is sensitive to current alignment and ranges between 40 and 80 K. In H=70kOe semiconducting transport is restored for T<300K, resulting in large magnetoresistance [ρ(70kOe)-ρ(0)]/ρ(0)=2200% in the crossover temperature range.

© 2003 The American Physical Society

URL:
http://link.aps.org/doi/10.1103/PhysRevB.67.155205
DOI:
10.1103/PhysRevB.67.155205
PACS:
72.20.-i, 75.20.-g, 73.63.-b

*Present address: Physics Department, Brookhaven National Laboratory, Upton, NY 11973.

 
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