Phys. Rev. B 67, 153303 (2003) [4 pages]Field-effect persistent photoconductivity in AlAs and GaAs quantum wells with AlxGa1-xAs barriersReceived 3 December 2002; revised 21 February 2003; published 28 April 2003 We report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by AlxGa1-xAs barriers, brought about by illuminating the samples at T∼4K, while simultaneously applying a voltage bias between a back gate and the two-dimensional electron gas. Control of the final carrier density is achieved by tuning the back gate bias during illumination. Furthermore, the strength of the persistent photoconductivity depends on the Al mole fraction in the back AlxGa1-xAs barrier, and is largest at x≃0.4. © 2003 The American Physical Society URL:
http://link.aps.org/doi/10.1103/PhysRevB.67.153303
DOI:
10.1103/PhysRevB.67.153303
PACS:
72.40.+w, 72.20.Jv, 61.72.Hh
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